View PTFA080551E_4965517.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 - 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2
PTFA080551F Package H-37265-2
Three-carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, = 960 MHz
Features
* *
-35 -40 -45
Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Efficiency = 44% Typical CW performance - Output power at P-1dB = 75 W - Gain = 17 dB - Efficiency = 67% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power Pb-free and RoHS compliant
40 35
Adj. Ch. Power Ratio (dBc)
Efficiency
Drain Efficiency (%)
30 25
*
ACP Low
20 15 10 5 0 29 31 33 35 37 39 41 43
-50 -55 -60
ACP Up ALT Up
* * * *
-65 -70
Output Power, Avg. (dBm)
RF Characteristics
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 26 W AVG, = 959.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 kHz Modulation Spectrum @ 600 kHz Gain Drain Efficiency All published data at TCASE = 25C unless otherwise indicated
Symbol
EVM (RMS) ACPR ACPR Gps
Min
-- -- -- -- --
Typ
2.5 -60 -75 18 44
Max
-- -- -- -- --
Unit
% dBc dBc dB %
D
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11 Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
18 46.5 --
Typ
18.5 48 -31
Max
-- -- -29
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.15 2.3 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 450 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 219 1.25 -40 to +150 0.8
Unit
V V C W W/C C C/W
Ordering Information
Type and Version PTFA080551E PTFA080551F V4 V4 Package Outline H-36265-2 H-37265-2 Package Description Thermally-enhanced, slotted flange, single-ended Thermally-enhanced, earless flange, single-ended Shipping Tray Tray Marking PTFA080551E PTFA080551F
*See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Edge EVM and Modulation Spectrum vs. Quiescent Current
VDD = 28 V, = 959.8 MHz, POUT = 22 W
2.1 1.9 -20
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 mA, = 959.8 MHz
0
55
Modulation Spectrum (dBc)
EVM
-30 -40 -50
Modulation Spectrum (dBc)
Efficiency Drain Efficiency (%)
-20 -40 45 35
EVM RMS (avg. %) .
1.7 1.5 1.3 1.1 0.9 0.7 0.35
400 kHz
-60 -70
400 kHz
-60 -80 25 15 5 32 34 36 38 40 42 44 46
600 kHz
0.40 0.45 0.50 0.55
-80
600 kHz
-90 0.60
-100
Quiescent Current (A)
Output Power (dBm)
EDGE EVM Performance
VDD = 28 V, IDQ = 450 mA, = 959.8 MHz
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit) VDD = 28 V, IDQ = 450 mA, 1 = 959 MHz, 2 = 960 MHz
55 45 35 25 15 5 -20 -30
10 8 6 4 2 0 32 34 36 38 40 42 44 46
EVM RMS (avg. %) .
Drain Efficiency (%)
IMD (dBc)
Efficiency
-40 -50
3rd Order
5th
-60
EVM
7th
-70 30 33 36 39 42 45 48
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 11
Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
IM3 vs. Output Power at Selected Biases
VDD = 28 V, 1 = 959, 2 = 960 MHz
Linear Broadband Performance
VDD = 28 V, IDQ = 600 mA, POUT Avg = 44.39 dBm
-20
51
40 30
-30
Efficiency (%)
IMD (dBc)
300 mA 450 mA
Gain
49 48 47 46 45 20 10 0 -10 -20
Efficiency
-40
-50
Return Loss
-60 29 31 33 35 37 39 41 43 45 47
44 860
880
900
920
940
-30 960
Output Power, Avg. (dBm)
Frequency (MHz)
Power Sweep
VDD = 28 V, = 960 MHz
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 600 mA, = 960 MHz
19
21
70 60
IDQ = 600 mA Power Gain (dB)
18
20 19
Gain
50 40
18 17 16 15 30
17
IDQ = 450 mA
16
IDQ = 300 mA
Efficiency
20 10
15 36 38 40 42 44 46 48 50
14 36 38 40 42 44 46 48 50
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2008-10-22
Drain Efficiency (%)
Gain (dB)
Gain, Return Loss (dB)
600 mA
50
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Power (P-1dB) vs. Drain Voltage
IDQ = 600 mA, = 960 MHz
IS-95 CDMA Performance
VDD = 28 V, IDQ = 450 mA, = 960 MHz TCASE = 25C
45 40
51 50
TCASE = 90C Efficiency
0
Output Power (dBm)
49 48 47 46 45 24 26 28 30 32
Drain Efficiency (%)
35 30 25 20 15 10 5 0 29 31 33 35 37 39 41 43
-20 -30
ACP FC - 0.75 MHz
-40 -50 -60 -70
ACPR FC + 1.98 MHz
-80 -90
Drain Voltage (V)
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
0.778 A 1.03 1.55 A 3.11 A 3.88 A 4.66 A 5.44 A 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100 6.22 A 7.00 A
Normalized Bias Voltage (V)
1.02 1.01 1.00
Case Temperature (C)
Data Sheet
5 of 11
Rev. 03, 2008-10-22
Adj. Ch. Power Ratio (dBc)
-10
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
D
Z Source
Z Load
G S
Frequency
MHz 869 880 894 920 960 R
Z Source
jX -10.93 -8.28 -5.43 -7.16 -5.57 8.91 3.72 5.93 4.87 6.05
Z Load
R 7.42 4.65 4.61 4.88 4.89 jX -1.63 -1.74 0.16 -0.59 0.86
See next page for circuit information
Data Sheet
6 of 11
Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V Q1 BCP56 C2 0.001F C3 0.001F R3 2K V R4 2K V R5 5.1 V C4 10F 35V
QQ1 LM7805 VDD
R6 10 V C5 0.1F R7 5.1K C6 0.1F C7 0.01F C8 33pF C12 33pF C13 1F C14 10F 50V
L1 VDD C15 0.1F C16 10F 50V
l5
R8 10 V C9 33pF DUT
l6
C23 33pF
R F_IN
l1
l2
l3
C10 3.3pF
l4
C11 1.0pF
l8
l9
l10
C22 0.3pF L2
l11
a 001f c 0- 85e_h601 s_ 33
R F_OUT
l7
C17 33F
C18 1F
C19 10F 50V
C20 0.1F
C21 10F 50V
Reference circuit schematic diagram for = 960 MHz
Circuit Assembly Information
DUT PCB PTFA080551E or PTFA080551F 0.76 mm [.030"] thick, r = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper
Microstrip
Electrical Characteristics at 960 MHz1
0.070 0.122 0.031 0.063 0.162 0.150 0.198 0.145 0.009 0.026 , 50.0 , 50.0 , 50.0 , 7.5 , 67.0 , 55.0 , 11.1 , 38.0 , 38.0 , 50.0
Dimensions: L x W (mm)
12.19 x 1.37 20.93 x 1.37 5.31 x 1.37 9.58 x 16.21 28.45 x 0.79 25.65 x 1.17 30.73 x 10.46 24.21 x 2.16 1.52 x 2.16 4.50 x 1.37
Dimensions: L x W (in.)
0.480 0.824 0.209 0.377 1.120 1.010 1.210 0.953 0.060 0.177 x x x x x x x x x x 0.054 0.054 0.054 0.638 0.031 0.046 0.412 0.085 0.085 0.054
l1 l2 l3 l4 l5 l6, l7 l8 l9 l10 l11
1Electrical characteristics are rounded.
Data Sheet
7 of 11
Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
R5 C4 C5 C8 C7 C6 R6
R4 R3 C3 C1 QQ1 R7 R1R2 Q1 R8 C2 C12 L1 C13 C14
C16
C15
C22 C23
C9
C10 C11 C19 C17 C18 L2 C21
C20
A080551in_01
A080551out_01
a080551ef assy- 06-03-14 _
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C6, C15, C20 C8, C9, C12, C17, C23 C7 C10 C11 C13, C18 C14, C16, C19, C21 C22 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Ceramic capacitor, 33 pF Capacitor, 0.01 F Ceramic capacitor, 3.3 pF Ceramic capacitor, 1.0 pF Capacitor, 1.0 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 0.3 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 2 k-ohms Potentiometer 2 k-ohms Chip Resistor 5.1 k-ohms Chip Resistor 10 ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 100B 330 200B 103 100B 3R3 100B 1R0 920C105 TPSE106K050R0400 100B 0R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND
*Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36265-2
45 X 2.03 [.080] 2X 7.11 [.280] 6. ALL FOUR CORNERS
D S
FLANGE 9.78 [.385] 3.05 [.120] C L
2.66.51 [.105.020]
LID 10.16.25 [.400.010]
15.49.51 [.610.020]
2X R1.52 [R.060] 4X R0.63 [R.025] MAX C L
G
C66065-A2326-C001-01-0027 H-36265-2.dwg
15.23 [.600]
4X R1.52 [R.060]
SPH 1.57 [.062]
10.16.25 [.400.010]
3.61.38 [.142.015] 0.0381 [.0015] -A1.02 [.040] 20.31 [.800]
6.
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. 7. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Exposed metal plane on top and bottom of ceramic insulator. All tolerances 0.1 [.025] / 0.127 [.005] unless specified otherwise.
Data Sheet
9 of 11
Rev. 03, 2008-10-22
PTFA080551E PTFA080551F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37265-2
45 X 2.03 [.080] 6. 2X 7.11 [.280] ALL FOUR CORNERS
D
2.66.51 [.105.020]
FLANGE 10.16 [.400]
C L
LID 10.16.25 [.400.010]
15.49.51 [.610.020]
G
4X R0.63 [R.025] MAX
C66065-A2327-C001-01-0027 H-37265-2.dwg
C L
SPH 1.57 [.062]
10.16.25 [.400.010]
3.61.38 [.142.015] 0.0381 [.0015] -A1.02 [.040] 10.16 [.400]
S
1. 2. 3. 4. 5. 6. 7.
Diagram Notes--unless otherwise specified: Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Exposed metal plane on top and bottom of ceramic insulator. All tolerances 0.1 [.025] / 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 03, 2008-10-22
PTFA080551E/F Confidential, Limited Internal Distribution Revision History: 2008-10-22 2008-10-14, Data Sheet Previous Version: Page 5 9, 10 11 Subjects (major changes since last revision) Remeasure Voltage vs. Temperature Update package outline diagrams and information Update company information.
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2008-10-22 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 03, 2008-10-22

▲Up To Search▲

Price & Availability of PTFA080551E

	To Download PTFA080551E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .